DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor • Junction Temperature to +200°C

文件：157.15 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Power Transistors

Power Transistors TO-3 Case (Continued)

文件：54.14 Kbytes 页数：1 Pages

Central

POWER TRANSISTORS(30A,60-120V,200W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . .designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain hFE= 1000 (Min) @ IC = 20 A • Monolithic Construction with Built−in Base Emitter Shun

文件：140.07 Kbytes 页数：3 Pages

MOSPEC

统懋

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain - hFE= 1000 (Min) @ IC −20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor • Junction Temperature to +200C

文件：157.15 Kbytes 页数：4 Pages

Motorola

摩托罗拉

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC= 20A • Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A • Complement to Type MJ11013 APPLICATIONS • Designed for use as output devices i

文件：51.89 Kbytes 页数：2 Pages

ISC

无锡固电

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ..designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * High DCCurrent Gain hFE = 1000(Min) @ lc = 20A * Monolithic Construction with Built-in Base-Emitter S

文件：96.68 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

文件：20.02 Kbytes 页数：1 Pages

WINGS

永盛电子

Bipolar NPN Device in a Hermetically sealed TO3

文件：15.52 Kbytes 页数：1 Pages

SEME-LAB

200W NPN Darlington BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Digitron

Trans Darlington NPN 90V 30A 3-Pin(2+Tab) TO-3 Sleeve

NJS