Power Transistors

Power Transistors TO-3 Case (Continued)

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POWER TRANSISTORS(30A,60-120V,200W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . .designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain hFE= 1000 (Min) @ IC = 20 A • Monolithic Construction with Built−in Base Emitter Shun

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MOSPEC

统懋

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC= -20A • Low Collector Saturation Voltage- : VCE (sat)= -3.0V(Max.)@ IC= -20A • Complement to Type MJ11012 APPLICATIONS • Designed for use as output devices in complementary

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ISC

无锡固电

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ..designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * High DCCurrent Gain hFE = 1000(Min) @ lc = 20A * Monolithic Construction with Built-in Base-Emitter S

文件：96.68 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

PNP SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

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WINGS

永盛电子

Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington

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