首页 >MIS6412>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
14mm(0.56inch)FourDigitMULTIPLEXCLOCKSTICKDISPLAY Features •BrightBoldSegments •CommonAnode/Cathode •LowPowerConsumption •LowCurrentCapability •HighPerformance •HighReliability Applications •Appliances •Automotive •Instrumentation •ProcessControl | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Intel®CeleronJ6412SoCFanlessThinMini-ITXMotherboardsupports4LAN,M.2NVMeSSD Features •Four(4)LAN/EthernetPortsonboard•Intel®CeleronJ6412QuadCoreSoCupto2.6GHzBurstFrequency, ElkhartLakePlatform•4xRJ45LANPorts,2x2.5GbE,2x1GbE•SupportsThreeIndependentDisplays•5xUSB3.0and4xUSB2.0•1xM.2EKey,1xM.2NVMe•4xCOMPorts,1 | BCM bcm advanced search | BCM | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=58A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFET100V,58A,18.2m廓 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFET100V,58A,18.2m廓 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
BilateralTriggerDiodes(DIACS) Description: TheNTE6407thruNTE6412arebilateraltriggerDIACsofferingarangeofvoltagecharacteristicsfrom28Vto63V.Thesedevicesaretriggeredfromablocking–to–conductionstateforeitherpolarityofappliedvoltagewhenevertheamplitudeofappliedvoltageexceedsthebreakoverv | NTE NTE Electronics | NTE |
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