POWER INDUCTOR

文件：169.74 Kbytes 页数：1 Pages

MNC

铭普光磁

Microwave Bipolar Power Amplifier

文件：51.87 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

1930-1990 MHz, 10W RF POWER LDMOS AMPLIFIER

文件：147.75 Kbytes 页数：8 Pages

恩XP

1930-1990 MHz, 10W RF POWER LDMOS AMPLIFIER

文件：147.75 Kbytes 页数：8 Pages

恩XP

1930-1990 MHz, 10W RF POWER LDMOS AMPLIFIER

文件：147.75 Kbytes 页数：8 Pages

恩XP

1000 MHz, 21 dB Gain, 132-Channel GaAs CATV Amplifier Module

OverviewPart removed from active portfolio. Possible Replacement Part: None. \n•Specified for 79–, 112– and 132–Channel Loading\n\n•Excellent Distortion Performance\n\n•Higher Output Capability\n\n•Built-in Input Diode Protection\n\n•GaAs FET Transistor Technology\n\n•Unconditionally Stable Under All Load Conditions\n\n•Output Port Ring Wave Protection;

恩XP

1000 MHz, 23.8 dB Gain, 132-Channel GaAs CATV Amplifier Module

OverviewPart removed from active portfolio. Possible Replacement Part: None. \n•Specified for 79–, 112– and 132–Channel Loading\n\n•Excellent Distortion Performance\n\n•Integrated ESD Protection Diodes\n\n•GaAs FET Transistor Technology\n\n•Unconditionally Stable Under All Load Conditions;

恩XP

1000 MHz, 25.5 dB Gain, 132-Channel GaAs CATV Amplifier Module

OverviewPart removed from active portfolio. Possible Replacement Part: None. \n•Specified for 79–, 112– and 132–Channel Loading\n\n•Excellent Distortion Performance\n\n•Higher Output Capability\n\n•Built-in Input Diode Protection\n\n•GaAs FET Transistor Technology\n\n•Unconditionally Stable Under All Load Conditions\n\n•Output Port Ring Wave Protection;

恩XP

包装：袋 类别：RF/IF，射频/中频和 RFID RF 天线 描述：ANT COIL-WHP 2.4DB 144-174 MHZ

PulseLarsen Antennas