MHVIC915R2中文资料746-960 MHz, 15 W, 27 V Single N-CDMA, GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier数据手册恩XP规格书

描述 Description

OverviewReplaced by MHVIC915NR2. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. The MHVIC915R2 wideband integrated circuit is designed with on-chip matching that makes it usable from 750 to 1000 MHz. This multi-stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats.

特性 Features

Final Application
•Typical Single–Carrier N–CDMA Performance: VDD =
27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 34 dBm,
Full Frequency Band (746 to 960 MHz), IS–95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13)

Power Gain: 31 dB
\tPower Added Efficiency: 21%
ACPR@ 750 kHz Offset:  –50 dBc @ 30 kHz Bandwidth



Driver Applications
•Typical Single–Carrier N–CDMA Performance: VDD = 27 Volts,
IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 23 dBm, Full Frequency
Band (869–894 MHz), IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13), Channel Bandwidth = 1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF
Power Gain:  31 dB
Power Added Efficiency:  21%
ACPR @ 750 kHz Offset:  –60 dBc @ 30 kHz Bandwidth
\tACPR @ 1.98 MHz Offset:  –66 dBc @ 30 kHz Bandwidth


•Typical GSM Performance: VDD = 26 Volts, Pout = 15 W P1dB, Full
Frequency Band (921–960 MHz)
Power Gain:  30 dB @ P1dB
Power Added Efficiency = 56% @ P1dB


•Capable of Handling 3:1 VSWR, @ 27 Vdc, 880 MHz, 15 Watts CW Output Power

•Characterized with Series Equivalent Large-Signal Impedance Parameterson

•On-Chip Matching (50 Ohm Input, DC Blocked, >9 Ohm Output)

•Integrated Quiescent Current Temperature Compensation with Enable/Disable Function

•On-Chip Current Mirror gm Reference FET for Self Biasing Application

•Integrated ESD Protection

•In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.