MHVIC2115NR2中文资料2170 MHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Wideband Integrated Power Amplifier数据手册恩XP规格书

描述 Description

OverviewMHVIC2115NR2 removed from active portfolio. Possible Replacement Part: MHVIC2114NR2 or MHV5IC2215NR2.

特性 Features

Final Application
•Typical W–CDMA Performance: –45 dBc ACPR,
2110–2170 MHz, VDD = 27 Volts, IDQ1 = 56 mA, IDQ2 = 61 mA,
IDQ3 = 117 mA, Pout = 34 dBm, 3GPP Test Model 1, Measured in 1.0 MHz BW @ 4 MHz offset,
64 DTCH
Power Gain: 30 dB
\tPAE: 16%

Driver Application
•Typical W–CDMA Performance: –53 dBc ACPR,
2110–2170 MHz, VDD = 26 Volts,
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm,
3GPP Test Model 1, Measured in 3.84 MHz BW @ 5 MHz offset, 64 DTCH
Power Gain: 34 dB

•Gain Flatness = 0.3 dB from 2110–2170 MHz

•P1dB = 15 Watts, Gain Flatness = 0.2 dB from 2110–2170 MHz

•Capable of Handling 3:1 VSWR, @ 26 Vdc, 2140 MHz, 15 Watts CW Output Power

•Characterized with Series Equivalent Large-Signal Impedance Parameters

•On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)

•Integrated Temperature Compensation with Enable/Disable Function

•Integrated ESD Protection

•RoHS Compliant

•In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.