MHVIC2114NR2数据手册恩XP中文资料规格书

描述 Description

Overview The MHVIC2114NR2 wideband integrated circuit is designed for base station applications. It uses NXP® Semiconductors's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On-Chip matching design makes it usable from 1600 to 2600 MHz. The linearity performances cover all modulation formats for cellular applications: CDMA and W-CDMA. The device is in a PFP-16 flat pack package that provides excellent thermal performance through a solderable backside contact.
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特性 Features

Final Application
•Typical Two–Tone Performance: VDD = 27 Volts, IDQ1
= 95 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 15 Watts PEP,
Full Frequency Band
Power Gain:  32 dB
\tIMD:  –30 dBc


Driver Application
•Typical Single–Channel W–CDMA Performance: VDD = 27 Volts,
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA,
Pout = 23 dBm, 2110–2170 MHz, 3GPP Test Model 1, Measured in a 3.84 MHz BW @ 5 MHz Offset, 64
DTCH, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain:  32 dB
\tACPR:  –58 dBc


•P1dB = 14 Watts, Gain Flatness = 0.2 dB from 2110 to 2170 MHz

•Capable of Handling 3:1 VSWR, @ 27 Vdc, 2140 MHz, 15 Watts CW Output Power

•Characterized with Series Equivalent Large–Signal Impedance Parameters
and Common Source Scattering Parameters

•On–Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)

•Integrated Temperature Compensation with Enable/Disable Function

•Integrated ESD Protection

•RoHS Compliant

•In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.