RF LDMOS Wideband Integrated Power Amplifier

The MHVIC2114NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On-Chip matching design makes it usable from 1600 to 2600 MHz. The linearity per

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FREESCALEFreescale Semiconductor, Inc

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RF LDMOS Wideband Integrated Power Amplifier

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恩XP

2100 MHz, 27 V, 23 dBm Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier

Overview The MHVIC2114NR2 wideband integrated circuit is designed for base station applications. It uses 恩XP® Semiconductors's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On-Chip matching design makes it usable from 1600 to 2600 MHz. \nFinal Application\n•Typical Two–Tone Performance: VDD = 27 Volts, IDQ1 \n= 95 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 15 Watts PEP, \nFull Frequency Band\nPower Gain:  32 dB\n\tIMD:  –30 dBc\n\n\nDriver Application\n•Typical Single–Channel W–CDMA Performance: VDD = 27 Volts, \nIDQ1 = 96 mA, IDQ2 ;

恩XP

SMD

MOTOLA

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