RF LDMOS Wideband Integrated Power Amplifier

RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On-Chip matching design makes it us

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FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifier

The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On-Chip matchi

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MOTOROLA

摩托罗拉

2100 MHz, 27 V, 23 dBm Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier

Overview Replaced by MHVIC2114NR2. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. The MHVIC2114R2 wideband integrated circuit is designed for base station applications. It uses 恩XP® Semiconductors's newest High Voltage (26 to 28 Volts) \n \n\n\nFinal Application\n•Typical Two–Tone Performance: VDD = 27 Volts, IDQ1 \n= 95 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 15 Watts PEP, \nFull Frequency Band\nPower Gain:  32 dB\n\tIMD:  –30 dBc\n\n\nDriver Application\n•Typical Single–Channel W–CDMA Performance: VDD = 27 Volts, \nIDQ1 = 96 mA;

恩XP

SMD

MOTOLA

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