RF LDMOS Wideband Integrated Power Amplifier

RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on-chip matching that makes it usable from 750 to 1000 MHz. This multi- stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats.

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FREESCALEFreescale Semiconductor, Inc

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RF LDMOS Wideband Integrated Power Amplifier

文件：556.97 Kbytes 页数：16 Pages

恩XP

746-960 MHz, 15 W, 27 V Single N-CDMA, GSM/GSM EDGE , RF LDMOS Wideband Integrated Power Amplifier

Overview The MHVIC915NR2 wideband integrated circuit is designed with on-chip matching that makes it usable from 750 to 1000 MHz. This multi-stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats.\nArchived content is no longer updated an \nFinal Application\n•Typical Single–Carrier N–CDMA Performance: VDD = \n27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 34 dBm, \nFull Frequency Band (746 to 960 MHz), IS–95 CDMA (Pilot, Sync, Paging, \nTraffic Codes 8 Through 13)\nPower Gain: 31 dB\n\tPower Added Efficiency: 21%\nACPR @ 750 kHz ;

恩XP

SMD

MOTOLA

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