MHVIC915NR2中文资料飞思卡尔数据手册PDF规格书

RF LDMOS Wideband Integrated Power Amplifier

The MHVIC915NR2 wideband integrated circuit is designed with on-chip matching that makes it usable from 750 to 1000 MHz. This multi- stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats.

Final Application

• Typical Single-Carrier N-CDMA Performance: VDD = 27 Volts, IDQ1 =

80 mA, IDQ2 = 120 mA, Pout = 34 dBm, Full Frequency Band (746 to

960 MHz), IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)

Power Gain — 31 dB

Power Added Efficiency — 21

ACPR @ 750 kHz Offset — -50 dBc in 30 kHz Bandwidth

Driver Applications

• Typical Single-Carrier N-CDMA Performance: VDD = 27 Volts, IDQ1 = 80

mA, IDQ2 = 120 mA, Pout = 23 dBm, Full Frequency Band (869-

894 MHz), IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13),

Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01

Probability on CCDF.

Power Gain — 31 dB

Power Added Efficiency — 21

ACPR @ 750 kHz Offset — -60 dBc in 30 kHz Bandwidth

ACPR @ 1.98 MHz Offset — -66 dBc in 30 kHz Bandwidth

• Typical GSM Performance: VDD = 26 Volts, Pout = 15 W P1dB, Full

Frequency Band (921-960 MHz)

Power Gain — 30 dB @ P1dB

Power Added Efficiency = 56 @ P1dB

• Capable of Handling 3:1 VSWR, @ 27 Vdc, 880 MHz, 15 Watts CW Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• On-Chip Matching (50 Ohm Input, DC Blocked, >9 Ohm Output)

• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function

• On-Chip Current Mirror gm Reference FET for Self Biasing Application (1)

• Integrated ESD Protection

• RoHS Compliant

• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.