MHVIC2114R2中文资料飞思卡尔数据手册PDF规格书

RF LDMOS Wideband Integrated Power Amplifier

The MHVIC2114R2 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On-Chip matching design makes it usable from 1600 to 2600 MHz. The linearity performances cover all modulation formats for cellular applications: CDMA and W-CDMA. The device is in a PFP - 16 flat pack package that provides excellent thermal performance through a solderable backside contact.

Final Application

• Typical Two-Tone Performance: VDD = 27 Volts, IDQ1 = 95 mA, IDQ2 =

204 mA, IDQ3 = 111 mA, Pout = 15 Watts PEP, Full Frequency Band

Power Gain — 32 dB

IMD — -30 dBc

Driver Application

• Typical Single-Channel W-CDMA Performance: VDD = 27 Volts, IDQ1 =

96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm, 2110-2170 MHz,

3GPP Test Model 1, Measured in a 3.84 MHz BW @ 5 MHz Offset, 64

DTCH, Peak/Avg. = 8.5 dB @ 0.01 Probability on CCDF.

Power Gain — 32 dB

ACPR — -58 dBc

• P1dB = 14 Watts, Gain Flatness = 0.2 dB from 2110 to 2170 MHz

• Capable of Handling 3:1 VSWR, @ 27 Vdc, 2140 MHz, 15 Watts CW Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source Scattering Parameters

• On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)

• Integrated Temperature Compensation with Enable/Disable Function

• Integrated ESD Protection

• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.