MHV5IC2215NR2中文资料2170 MHz, 23 dBm, 28 V Single N-CDMA, Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier数据手册恩XP规格书

描述 Description

Overview The MHV5IC2215NR2 wideband integrated circuit is designed for base station applications. It uses Our High Voltage (28 Volts) LDMOS IC technology and integrates a two-stage structure. Its wideband on-chip matching design makes it usable from 1500 to 2200 MHz. The linearity performances cover all modulation formats for cellular applications including TD-SCDMA.
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特性 Features

Driver Application
•Typical Single–Carrier N–CDMA Performance: VDD = 28 Volts,
IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm, Full Frequency Band
(1930–1990 MHz), IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through
13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
Power Gain:  27.5 dB
\tACPR @ 885 kHz Offset:  –60 dBc in 30 kHz Bandwidth

•Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts,
IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm, Full Frequency Band
(2130–2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain:  24 dB
\tACPR @ 5 MHz Offset:  –55 dBc in 3.84 MHz Channel Bandwidth

•Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 15 Watts CW Output Power

•Characterized with Series Equivalent Large–Signal Impedance Parameters
and Common Source Scattering Parameters

•On-Chip Matching (50 Ohm Input, >5 Ohm Output)

•Integrated Quiescent Current Temperature Compensation
\twith Enable/Disable Function

•On-Chip Current Mirror gm Reference FET for Self Biasing Application

•Integrated ESD Protection

•RoHS Compliant

•In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.