MHVIC910HNR2中文资料960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit数据手册恩XP规格书

描述 Description

Overview The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Our newest High Voltage (26 Volts) LDMOS IC technology, and contains a three-stage amplifier. Target applications include macrocell (driver function) and microcell base stations (final stage). The device is in a PFP-16 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact.
Archived content is no longer updated and is made available for historical reference only.

特性 Features

•Typical GSM Performance: VDD = 26 Volts, IDQ = 150 mA,
Pout = 10 Watts, Full Frequency Band (921–960 MHz)
Power Gain: 39 dB (Typ)
\tPower Added Efficiency: 48% (Typ)

•Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 10 Watts CW Output Power

•Stable into a 10:1 VSWR. All Spurs Below –60 dBc @ 0 to 40 dBm CW Pout.

•On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)

•Integrated ESD Protection

•Usable Frequency Range — 921 to 960 MHz

•RoHS Compliant

•In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.