MHVIC910HNR2数据手册恩XP中文资料规格书

描述 Description

Overview The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Our newest High Voltage (26 Volts) LDMOS IC technology, and contains a three-stage amplifier. Target applications include macrocell (driver function) and microcell base stations (final stage). The device is in a PFP-16 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact.
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特性 Features

•Typical GSM Performance: VDD = 26 Volts, IDQ = 150 mA,
Pout = 10 Watts, Full Frequency Band (921–960 MHz)
Power Gain: 39 dB (Typ)
\tPower Added Efficiency: 48% (Typ)

•Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 10 Watts CW Output Power

•Stable into a 10:1 VSWR. All Spurs Below –60 dBc @ 0 to 40 dBm CW Pout.

•On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)

•Integrated ESD Protection

•Usable Frequency Range — 921 to 960 MHz

•RoHS Compliant

•In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.