Non-Micro Power Switch

Low Sensitive Open Drain Omnipolar Hall\n• DMOS Hall IC Technology.\n• Operation range from 2.5V to 26V .\n• Omni polar, output switches with absolute value of North or South pole from magnet.\n• Reverse bias protection on power supply pin.\n• High Sensitivity for reed switch replacement application;

MST

美加

150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

The RF MOSFET Line Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc Output Power — 150 Watts Power Gain — 10 dB (Min) Efficiency —

文件：226.31 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

Silicon Complementary Transistors Darlington Power Amplifier, Switch

Description: The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low–frequency switching and hammer driver applications. Features: • High DC Current Gain: hFE = 3000 Typ @ IC = 2A • Low Collect

文件：25.78 Kbytes 页数：2 Pages

NTE

AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE

FEATURES • Protects by limiting voltages and shunting surge currents away from sensitive circuits • Designed for telecommunications applications such as line cards, modems, PBX, FAX, LAN,VHDSL • Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68 • Low capacit

文件：87.89 Kbytes 页数：6 Pages

PANJIT

強茂