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10N120BN

35A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

10N120BN

35A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

10N120BND

35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

10N120BND

35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BRG10N120D

Insulated-GateBipolarTransistorinaTO-3PPlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

HGTG10N120BN

35A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG10N120BN

35A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG10N120BN

35A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTG10N120BND

35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTG10N120BND

35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP10N120BN

35A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP10N120BN

35A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTP10N120BN

35A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HM10N120T

1200V/10ATrenchFieldStopIGBT

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

MPCK10N120A

ZeroReverseRecoveryCurrent

Features ZeroReverseRecoveryCurrent ZeroForwardRecoveryVoltage Temperature-independentSwitchingBehavior PositiveTemperatureCoefficientonVF High-speedswitchingpossible Highsurgecurrentcapability Applications SwitchModePowerSupply(SMPS) MotorDrives 

FS

First Silicon Co., Ltd

SCT10N120

HighvoltageDC-DCconverters

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

SCT10N120AG

Automotive-gradesiliconcarbidePowerMOSFET1200V,12A,520mΩ(typ.,TJ=150°C)inanHiP247package

Features •AEC-Q101qualified •Verytightvariationofon-resistancevs.temperature •Veryhighoperatingtemperaturecapability(TJ=200°C) •Veryfastandrobustintrinsicbodydiode •Lowcapacitance Applications •Motordrives •EVchargers •HighvoltageDC-DCconverters •Swi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

SGH10N120RUF

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswher

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGH10N120RUFD

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinvertersw

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

UG10N120

NPTSERIESN-CHANNELIGBT

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

供应商型号品牌批号封装库存备注价格
fsc
dc11
原厂封装
5
INSTOCK:50/tube/to220
询价
MGT-PS323-UNV
102
102
询价
HALO
ROHS
13352
一级代理 原装正品假一罚十价格优势长期供货
询价
HALO
2022+
RJ45
90000
原厂原盒现货,年底清仓大特价!送
询价
HALO
23+
RJ45
89630
当天发货全新原装现货
询价
HALO
24+25+/26+27+
RJ45.连接器
12680
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
HALO
1736+
SOP
15238
原厂优势渠道
询价
HALO
SOP
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
NEC
2023+
SSOP30
3785
全新原厂原装产品、公司现货销售
询价
MMDC/美国
23+
SMD
5000
公司只做原装,可配单
询价
更多MGTP10N120BN供应商 更新时间2024-6-3 18:21:00