GaAs Schottky Diodes

MACOM's MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. ·Fourteen different configurations\n·Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available\n·Beam lead, Flip Chip or packaged devices;

MACOM

GaAs Schottky Diodes

文件：710.81 Kbytes 页数：4 Pages

MA-COM

Package：GB110；包装：管件 类别：分立半导体产品 二极管 - 射频 描述：SCHOTTKY DIODE,GAAS-BEAMLEAD, GB

MACOM Technology Solutions

Power Transistors

Power Transistors TO-3 Case (Continued)

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Central

isc Silicon PNP Darlington Power Transistor

文件：215.4 Kbytes 页数：2 Pages

ISC

无锡固电

COMPLEMENTARY POWER DARLINGTONS

The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary NPN types are the MJ1000 and MJ1001 respectively.

文件：175.78 Kbytes 页数：4 Pages

COMSET