MG100Q2YS51A

N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)

HighPowerSwitchingApplications MotorControlApplications •HighInputImpedance •HighSpeed:tf=0.3µs(Max) @Inductiveload •LowSaturationVoltage :VCE(sat)=3.6V(Max) •Enhancement-Mode •IncludesaCompleteHalfBridgeinOnePackage

MG100Q2YS65H

TOSHIBA IGBT Module Silicon N Channel IGBT

HighPower&HighSpeedSwitchingApplications ●Highinputimpedance ●Enhancement-mode ●Theelectrodesareisolatedfromcase.

MG113P

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s0.25µmApplication-SpecificIntegratedCircuit(ASIC)productsareavailableinbothSeaOfGates(SOG)andCustomerStructuredArray(CSA)architectures.BoththeSOG-basedMG115PseriesandtheCSA-basedMG75Pseriesuseafive-layermetalprocesson0.25µmdrawn(0.18µmL-eff

MG114P

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s0.25µmApplication-SpecificIntegratedCircuit(ASIC)productsareavailableinbothSeaOfGates(SOG)andCustomerStructuredArray(CSA)architectures.BoththeSOG-basedMG115PseriesandtheCSA-basedMG75Pseriesuseafive-layermetalprocesson0.25µmdrawn(0.18µmL-eff

MG115P

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s0.25µmApplication-SpecificIntegratedCircuit(ASIC)productsareavailableinbothSeaOfGates(SOG)andCustomerStructuredArray(CSA)architectures.BoththeSOG-basedMG115PseriesandtheCSA-basedMG75Pseriesuseafive-layermetalprocesson0.25µmdrawn(0.18µmL-eff

MG12

High Voltage Metal Glaze Resistor

Features: •Highvoltagecapabilityfrom1600Vto7000V •Inexpensivehighvoltageleadedresistorsolution •Highresistancevaluesupto500M •Tolerancesaslowas1;TCRsaslowas50ppm/ºC •Flameproofcoating(brown)standard •Epoxycoating(blue)availableupto2W •MGEandMGMEd

MG120R040

N-CHANNEL Enhancement Silicon Carbide MOSFET

APPLICATIONS ⚫SolarInverters ⚫SwitchModePowerSupplies ⚫HighVoltageDC/DCConverters ⚫BatteryChargers ⚫MotorDrives ⚫PulsedPowerapplications FEATURES ⚫HighBlockingVoltage ⚫LowOn-Resistance ⚫HighSpeedSwitchingwithLowCapacitances ⚫EasytoParallelandSimpletoDrive ⚫Av

MG120R040-GE-BR

Marking：MG120R040；Package：TO-247；N-CHANNEL Enhancement Silicon Carbide MOSFET

APPLICATIONS ⚫SolarInverters ⚫SwitchModePowerSupplies ⚫HighVoltageDC/DCConverters ⚫BatteryChargers ⚫MotorDrives ⚫PulsedPowerapplications FEATURES ⚫HighBlockingVoltage ⚫LowOn-Resistance ⚫HighSpeedSwitchingwithLowCapacitances ⚫EasytoParallelandSimpletoDrive ⚫Av

MG120R040-GH-BR

Marking：MG120R040；Package：TO-247-4L；N-CHANNEL Enhancement Silicon Carbide MOSFET

APPLICATIONS ⚫SolarInverters ⚫SwitchModePowerSupplies ⚫HighVoltageDC/DCConverters ⚫BatteryChargers ⚫MotorDrives ⚫PulsedPowerapplications FEATURES ⚫HighBlockingVoltage ⚫LowOn-Resistance ⚫HighSpeedSwitchingwithLowCapacitances ⚫EasytoParallelandSimpletoDrive ⚫Av

MG120R080

N-CHANNEL Enhancement Silicon Carbide MOSFET

APPLICATIONS ⚫SolarInverters ⚫SwitchModePowerSupplies ⚫HighVoltageDC/DCConverters ⚫BatteryChargers ⚫MotorDrives ⚫PulsedPowerapplication FEATURES ⚫HighBlockingVoltage ⚫LowOn-Resistance ⚫HighSpeedSwitchingwithLowCapacitances ⚫EasytoParallelandSimpletoDrive ⚫Ava