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MJE800

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

MJE800

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MJE800

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices.

CentralCentral Semiconductor Corp

美国中央半导体

MJE800G

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE800G

PlasticDarlingtonComplementarySiliconPowerTransistors

Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE800T

POWERTRANSISTORS(4.0A,60-80V,40W)

PLASTICDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. FEATURES *HighDCCurrentGain—hFE=2000(Typ)@IC=2.0A *MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakageMultiplicat

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MJE800T

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE800T

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MJE800T

iscSiliconNPNDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJE800T

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

技术参数

  • 最大电流:

    100A

  • 保持电流:

    8A

  • 跳闸电流:

    15A

  • 初始态阻值(最小值):

    8mΩ

  • 最大动作时间:

    8s

  • 工作温度:

    -40℃~+125℃

供应商型号品牌批号封装库存备注价格
BOURNS
2447
Radial
115000
1000个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
Bourns
22+
NA
5889
加我QQ或微信咨询更多详细信息,
询价
BOURNS
24+
插件
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
BOURNS
DIP
92000
一级代理 原装正品假一罚十价格优势长期供货
询价
Bourns
5
全新原装 货期两周
询价
Bourns
2022+
1
全新原装 货期两周
询价
BOURNS
20+
电路保护
6985
就找我吧!--邀您体验愉快问购元件!
询价
更多MF-RHT800供应商 更新时间2025-7-29 15:01:00