MOSFET

Force mos

力士科技

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output

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NEC

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1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE

DESCRIPTION The NX8562LB is a 1 550 nm laser diode with Polarization Maintain Fiber (PMF). This device is designed as CW light source and ideal for transmission systems in which external modulators are used. FEATURES • Output power Pf = 20 mW MIN. • Wavelength selectable for ITU-T standards

文件：66.93 Kbytes 页数：8 Pages

NEC

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1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE

DESCRIPTION The NDL7603P Series is a 1310 nm phase-shifted DFB (distributed feedback) laser diode module with single mode fiber. The Multiple Quantum Well (st-MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over a wide temperature range of -40 to +85°C. It

文件：74.73 Kbytes 页数：8 Pages

NEC

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