Power Management in Note book

GENERAL DESCRIPTION The ME2328 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦ 270mΩ@VGS=10V ● RDS(ON)≦ 340

文件：1.00965 Mbytes 页数：5 Pages

YFWDIODE

佑风微

三极管

AK

安捷利

MOSFET

Force mos

力士科技

Power Management in Note book

GENERAL DESCRIPTION The ME2328 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦ 270mΩ@VGS=10V ● RDS(ON)≦ 340

文件：1.00965 Mbytes 页数：5 Pages

YFWDIODE

佑风微