MOSFET

Force mos

力士科技

Axial Molded Choke

The MF range of encapsulated axial chokes from ECM have been especifically designed to cope with high current at temperatures up to 125°C, with minimum ppm / °C losses. Its physical construction, while not offering complete EMI shielding, generates extremely low magnetic interference and has a ty

文件：108.9 Kbytes 页数：8 Pages

ECM

FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE

DESCRIPTION The MGF1304A is a low-noise GaAs FET with an N-channel Schottky gate, which is designed for use in S- to Ku- band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. FEAT

文件：488.02 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

Low Distortion Wideband Reverse Amplifier Modules

The RF Line Low Distortion Wideband Reverse Amplifier Modules Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for low–split 2–way cable TV systems. Features all gold metallization system. • Guaranteed Broadband Po

文件：49.06 Kbytes 页数：2 Pages

MOTOROLA

摩托罗拉