Single and Dual Output 20 Watt DC/DC Converter 4:1 Wide Input Voltage Range

文件：256.38 Kbytes 页数：3 Pages

WALL

20 Watts DC/DC Converter Single and Dual Output

文件：423.58 Kbytes 页数：8 Pages

WALL

丝印：MDW；Package：TDFN-2X2-8AL；Linear Regulation Battery Charger

GENERAL DESCRIPTION The SGM41566 is designed for charging low capacity battery cell with factory-programmable current programmable in the range of 50mA to 750mA from loosen regulated power source. The device features low drop-out constant-current constant-voltage charging, weak battery pre-

文件：961.77 Kbytes 页数：21 Pages

SGMICRO

圣邦股份

Complementary N/P-Channel Enhancement Mode MOSFET

Features • Halogen and Antimony Free(HAF), RoHS compliant • Typical ESD Protection HBM Class 2 Application • Portable appliances • Battery management

文件：2.28148 Mbytes 页数：10 Pages

HUIXIN

慧芯电子

Dual N-Channel Enhancement Mode MOSFET

Features Surface-mounted package Built-in G-S Protection Diode

文件：1.23452 Mbytes 页数：6 Pages

HUIXIN

慧芯电子

Dual N-Channel Enhancement Mode MOSFET

Features • High speed switch • Built-in G-S Protection Diode • Halogen and Antimony Free(HAF), RoHS compliant • Typical ESD Protection HBM Class 2 Application • Portable appliances • Load switch appliances

文件：627.69 Kbytes 页数：6 Pages

HUIXIN

慧芯电子

Dual N-Channel Enhancement Mode MOSFET

Features • High speed switch • Advanced trench cell design • Halogen and Antimony Free(HAF), RoHS compliant • Typical ESD Protection HBM Class 2 Applications • Portable appliances • Load switch appliances

文件：491.58 Kbytes 页数：6 Pages

HUIXIN

慧芯电子

Common-Drain Dual N-Channel Trench MOSFET 24V, 22A, 2.8 mΩ

General Description The MDWC0151ERH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance and excellent reliability. Excellent low RSS(ON), low gate charge operation and operation for Battery Application. Features - VSS = 24V - Source-Source

文件：576.85 Kbytes 页数：6 Pages

MGCHIP

Common-Drain Dual N-Channel Trench MOSFET 12V

General Description The MDWC0342E uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance and excellent reliability. Excellent low RSS(ON), low gate charge operation and operation for Battery Application. Features - VSS = 12V - Source-Source ON

文件：1.10454 Mbytes 页数：6 Pages

MGCHIP

Common-Drain Dual N-Channel Trench MOSFET 12V

General Description The MDWC0342E uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance and excellent reliability. Excellent low RSS(ON), low gate charge operation and operation for Battery Application. Features - VSS = 12V - Source-Source ON

文件：1.10454 Mbytes 页数：6 Pages

MGCHIP