Single N-Channel Trench MOSFET 60V, 6A, 45m(ohm)

文件：813.35 Kbytes 页数：6 Pages

MGCHIP

60V N-Ch MOSFET

MagnaChip

美格纳

Medium Power Microwave MESFET

DESCRIPTION The MGF1951A is a 20mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power GLP=9dB, P1dB=13dBm (typ) @ f=12GHz • Leadless Ceramic Package APPLICATION S-

文件：28.87 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

Integrated Circuit Positive 3 Terminal Voltage Regulator, Low Dropout Voltage, 5V, 1A

Description: The NTE1951 positive voltage regulator features the ability to source 1A of output current with a dropout voltage of typically 0.5V and a maximum of 1V over the entire temperature range. Furthermore, a quiescent current reduction circuit has been included which reduces the ground c

文件：20.6 Kbytes 页数：2 Pages

NTE

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µ PA1951 is a switching device, which can be driven directly by a 1.8 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V dri

文件：73.95 Kbytes 页数：8 Pages

NEC

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