Single N-channel Trench MOSFET 12V, 15A, 8m(ohm)

文件：1.0888 Mbytes 页数：6 Pages

MGCHIP

Single N-channel Trench MOSFET 12V, 15A, 8m(ohm)

文件：1.0888 Mbytes 页数：6 Pages

MGCHIP

12V N-ch MOSFET

MagnaChip

美格纳

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ..designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * High DCCurrent Gain hFE = 1000(Min) @ lc = 20A * Monolithic Construction with Built-in Base-Emitter S

文件：96.68 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L

文件：144.93 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L

文件：143.77 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司