首页 >MDP6N60>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

SGR6N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses. TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeedsw

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGS6N60

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeedswi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGS6N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeedswi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGS6N60UFD

Ultra-FastIGBT

GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature.. Features •Highspeed

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGU6N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeedswi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGW6N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeedswi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGW6N60UFD

Ultra-FastIGBT

GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeeds

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SIHFIB6N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SiHFIB6N60A

VishaySiliconix

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

SSF6N60G

AdvancedMOSFETprocesstechnology

SILIKRONSilikron Semiconductor Co.,LTD.

Silikron Semiconductor Co.,LTD.

SSF6N60G

600VN-ChannelMOSFET

Good-Ark

Good-Ark

SSH6N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SSM6N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SSP6N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SSP6N60

N-CHANNELPOWERMOSFETS

FEATURES •LowerRDS(on) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

SamsungSamsung Group

三星三星半导体

SSQ6N60

N-ChEnhancementModePowerMOSFET

SECOS

SeCoS Halbleitertechnologie GmbH

SSS6N60

NCHANNELPOWERMOSFETS

SamsungSamsung Group

三星三星半导体

SSS6N60

N-Channel650V(D-S)SuperJunctionPowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STP6N60FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS)

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

SVF6N60D

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

详细参数

  • 型号:

    MDP6N60

  • 制造商:

    MagnaChip

  • 功能描述:

    N-Channel MOSFET 600V, 6.0A, 1.4?

供应商型号品牌批号封装库存备注价格
TO-220
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
美格纳Magnachip
22+23+
TO-220
25064
绝对原装正品全新进口深圳现货
询价
原装MAGNACHIP
2023+
TO-220
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
MAGNADHIP
TO-220
265209
假一罚十原包原标签常备现货!
询价
MAGNACHIP
22+
TO-220
28600
只做原装正品现货假一赔十一级代理
询价
MAGNACHIP/美格纳
23+
TO-220
50000
全新原装正品现货,支持订货
询价
MAGNACHIP/美格纳
2022
TO-220
80000
原装现货,OEM渠道,欢迎咨询
询价
MAGNADHIP
2022+
TO-220
50
原厂代理 终端免费提供样品
询价
MAGNACHIP/美格纳
22+
TO220
9800
只做原装正品假一赔十!正规渠道订货!
询价
MagnaChip/MagnaChip analog&am
21+
TO-220
6170
优势代理渠道,原装正品,可全系列订货开增值税票
询价
更多MDP6N60供应商 更新时间2024-5-29 17:27:00