SERIES 34C Sub-Miniature Toggle Switches

文件：201.99 Kbytes 页数：4 Pages

grayhill

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 130A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：331.44 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 600V, 10A, 0.7(ohm)

General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Feat

文件：1.43302 Mbytes 页数：8 Pages

MGCHIP

N-Channel MOSFET 600V, 10A, 0.7(ohm)

General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Feat

文件：1.43302 Mbytes 页数：8 Pages

MGCHIP

isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F packaging • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • PFC stages • LCD & PDP TV • Power supply • Sw

文件：315.2 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：332.35 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：331.4 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：331.38 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 500V, 13.0A, 0.5(ohm)

General Description The MDP13N50 uses advanced Magnachip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality. MDP13N50 is suitable device for SMPS, HID and general purpose applications. Features ■ VDS = 500V ■ ID = 13.0A @VGS = 10V ■ R

文件：851.29 Kbytes 页数：6 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.1 Kbytes 页数：2 Pages

ISC

无锡固电