SIHP12N50C

PowerMOSFETs

FEATURES •LowFigure-of-MeritRonxQg •100AvalancheTested •GateChargeImproved •Trr/QrrImproved •ComplianttoRoHSDirective2002/95/EC

SIHP12N50C

iscN-ChannelMOSFETTransistor

SIHP12N50E

ESeriesPowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Lowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance   pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Compu

SIHP12N50E

iscN-ChannelMOSFETTransistor

STF12N50U

N-channel500V,0.55Ω,10ATO-220FPUltrafastMESH™PowerMOSFET

Features ■100avalanchetested ■Outstandingdv/dtcapability ■Gatechargeminimized ■Verylowintrinsiccapacitance ■VerylowRDS(on) ■Extremelylowtrr Application ■Switchingapplications –HighvoltageinvertersspecificforLCDTV –Lightingfullbridgetopology –Motorcont

T12N50

N-Channel650V(D-S)MOSFET

TF12N50

PowerMOSFET

TMA12N50H

500VN-ChannelMOSFET

ZXT12N50DX

DUAL50VNPNSILICONLOWSATURATIONSWITCHINGTRANSISTOR

DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplications. FEATURES •ExtremelyLowEquival

ZXT12N50DX

DUAL50VNPNSILICONLOWSATURATIONSWITCHINGTRANSISTOR

DESCRIPTIONThisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplications. FEATURES •ExtremelyLowEquivale