丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：316.83 Kbytes 页数：2 Pages

ISC

无锡固电

Single N-channel Trench MOSFET 80V, 120A, 3.4m(ohm)

文件：1.043579 Mbytes 页数：6 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.4mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：332.38 Kbytes 页数：2 Pages

ISC

无锡固电

MDE1932RH美格纳原厂原装PDF资料

文件：1.068636 Mbytes 页数：0 Pages

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PDF上传者：深圳德田科技有限公司

Single N-channel Trench MOSFET 80V, 120A, 3.4m(ohm)

文件：1.043579 Mbytes 页数：6 Pages

MGCHIP

Single N-channel Trench MOSFET 80V, 120A, 3.4mΩ

MagnaChip

美格纳

80V N-Ch MOSFET

MagnaChip

美格纳