Single N-channel Trench MOSFET 100V, 10.8A, 140m(ohm)

General Description The MDD1904 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1904 is suitable device for DC to DC converter and general purpose applications. Features ❐ VDS = 100V ❐ ID

文件：1.02304 Mbytes 页数：6 Pages

MGCHIP

Single N-channel Trench MOSFET 100V, 10.8A, 140mΩ

General Description\nThe MDD1904 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1904 is suitable device for DC to DC converter and general purpose applications. ❐ VDS = 100V\n❐ ID = 10.8A @VGS = 10V\n❐ RDS(ON) (MAX)\n   < 140mΩ @VGS = 10V\n   < 150mΩ @VGS = 6.0V;

MagnaChip

美格纳

Single N-channel Trench MOSFET 100V, 10.8A, 140m(ohm)

General Description The MDD1904 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1904 is suitable device for DC to DC converter and general purpose applications. Features ❐ VDS = 100V ❐ ID

文件：1.02304 Mbytes 页数：6 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10.8A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 140mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：353.22 Kbytes 页数：2 Pages

ISC

无锡固电

100V N-Ch MOSFET

MagnaChip

美格纳