isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12.8A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

文件：331.14 Kbytes 页数：2 Pages

ISC

无锡固电

Single N-channel Trench MOSFET 100V, 12.8A, 105m(ohm)

文件：825.98 Kbytes 页数：6 Pages

MGCHIP

100V N-Ch MOSFET

MagnaChip

美格纳

Single N-channel Trench MOSFET 100V, 12A, 110m(ohm)

文件：1.043359 Mbytes 页数：6 Pages

MGCHIP

Single N-channel Trench MOSFET 100V, 12A, 110m(ohm)

文件：1.043359 Mbytes 页数：6 Pages

MGCHIP

Single N-channel Trench MOSFET 100V, 12.8A, 105m(ohm)

文件：829.13 Kbytes 页数：6 Pages

MGCHIP