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MD3251A

ELECTRICAL CHARACTERISTICS

Dual PNP silicon annular transistors, especially designed for low-level, differential amplifier applications.

文件:103.67 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MD3251AF

ELECTRICAL CHARACTERISTICS

Dual PNP silicon annular transistors, especially designed for low-level, differential amplifier applications.

文件:103.67 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MD3251AF

DUAL AMPLIFIER TRANSISTOR

DUAL AMPLIFIER TRANSISTOR PNP SILICON

文件:231.16 Kbytes 页数:7 Pages

Motorola

摩托罗拉

MD3251F

ELECTRICAL CHARACTERISTICS

Dual PNP silicon annular transistors, especially designed for low-level, differential amplifier applications.

文件:103.67 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MD3-30T

ME/MD SERIES

FEATURES e® High current ratings(max 200A) ® Good shield effect by using metal case ® Epoxy molded for reliability(model MD series) ® Two hole lug type terminal connection(model ME series) APPLICATIONS @® Cellular base stations. ® Telecommunication switching networks and racks.

文件:1.18237 Mbytes 页数:2 Pages

DIT

MD3-30TA

ME/MD SERIES

FEATURES e® High current ratings(max 200A) ® Good shield effect by using metal case ® Epoxy molded for reliability(model MD series) ® Two hole lug type terminal connection(model ME series) APPLICATIONS @® Cellular base stations. ® Telecommunication switching networks and racks.

文件:1.18237 Mbytes 页数:2 Pages

DIT

MD3-30TAX

ME/MD SERIES

FEATURES e® High current ratings(max 200A) ® Good shield effect by using metal case ® Epoxy molded for reliability(model MD series) ® Two hole lug type terminal connection(model ME series) APPLICATIONS @® Cellular base stations. ® Telecommunication switching networks and racks.

文件:1.18237 Mbytes 页数:2 Pages

DIT

MD3500

35A MOTOROLA TYPE PRESS-FIT DIODE

Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA

文件:30.16 Kbytes 页数:2 Pages

WTE

Won-Top Electronics

MD3500G

35A GLASS PASSIVATED MOTOROLA TYPE PRESS-FIT DIODE

Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA

文件:40.7 Kbytes 页数:2 Pages

WTE

Won-Top Electronics

MD3501

35A MOTOROLA TYPE PRESS-FIT DIODE

Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA

文件:30.16 Kbytes 页数:2 Pages

WTE

Won-Top Electronics

技术参数

  • VRRM(V):

    800

  • IF(A):

    300

  • @TC (℃):

    85

  • IFSM 10ms (A):

    11000

  • IRRM 150℃ (mA):

    15

  • VFM (V):

    1.8

  • @IF (A):

    900

  • Rth(j-c) (℃/W):

    0.04

  • Viso:

    2500

供应商型号品牌批号封装库存备注价格
24+
DIP4
1000
询价
INTERSIL
2450+
SC70-3
6540
只做原厂原装正品终端客户免费申请样品
询价
MN
1430+
DIP
5800
全新原装,公司大量现货供应,绝对正品
询价
SITI
13+
CSP-6
4248
原装分销
询价
M-SYSTEMS
17+
BGA
6200
100%原装正品现货
询价
SHINDENGEN
25+
SMD
3200
十年品牌!原装现货!!!
询价
M-SYSTEMS
24+
12
原装现货,可开13%税票
询价
FUJI
QFP
97
正品原装--自家现货-实单可谈
询价
Microchip
24+
SMD
17900
射频开发工具
询价
MOTOROLA
24+
CAN6
1200
原装现货假一罚十
询价
更多MD3供应商 更新时间2025-10-12 15:30:00