Power MOSFETS

MCC

美微科

TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fas

文件：155.55 Kbytes 页数：8 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 35mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：323.03 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Power MOSFET

文件：406.48 Kbytes 页数：4 Pages

SECOS

喜可士