N-Channel Enhancement Mode Field Effect Transistor

文件：502.61 Kbytes 页数：4 Pages

MCC

TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount

文件：93.35 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

TMOS E?묯ET Power Field Effect Transistor DPAK for Surface Mount

文件：79.09 Kbytes 页数：7 Pages

ONSEMI

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.22Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：345.85 Kbytes 页数：2 Pages

ISC

无锡固电