Low Input Current Phototransistor Optocouplers

Description The MCT52XXM series consists of a high-efficiency AlGaAs, infrared emitting diode, coupled with an NPN phototransistor in a six pin dual-in-line package. The MCT52XXM is well suited for CMOS to LSTT/TTL interfaces, offering 250 CTRCE(SAT) with 1mA of LED input current. When an LED in

文件：290.14 Kbytes 页数：12 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Low Input Current Phototransistor Optocouplers

文件：293.2 Kbytes 页数：12 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

6 引脚 DIP 低输入电流光电晶体管输出光耦合器

MCT52XXM系列包括一个高效率砷化铝镓红外线发光二极管，与一个NPN光电晶体管耦合，采用一个六引脚双列直插封装。MCT52XXM非常适合CMOS到LSTT/TTL的接口，提供250% CTR CE(SAT)，LED输入电流为1mA。 当LED输入电流加载为1.6mA时，数据速率可高达20K bits/s。MCT52XXM能简单地将LSTTL与LSTTL/ TTL连接，并且通过使用一个外部基级到发射器电阻达到高达100K bits/s的数据速率。 •可比达林顿（Darlington）晶体管的高CTRCE(SAT)\n•CTR保证0°C到70°C\n•高共模瞬变抑制：5kV/µs\n•数据速率最高可达150kbits/s (NRZ)\n•通过Underwriters Laboratory(UL)认证（文件编号E90700，第2卷）\n•已获IEC60747-5-2认证（订购选项V）;

ONSEMI

安森美半导体

K-Band 2-Stage Power Amplifier

DESCRIPTION The MGFC5211 is a GaAs MMIC chip especially designed for 21.2 ~ 23.6 GHz band High Power Amplifier (HPA) . FEATURES ● RF frequency : 21.2 to 23.6 GHz ● Linear gain : ³ 13 dB ● P1dB : ³ 23 dBm ● DC power : Vd = 5 V, Id1 + Id2 = 270 mA

文件：24.5 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

Dual 關Cap 80mA LDO Regulator Preliminary Information

General Description The MIC5211 is a dual µCap 80mA linear voltage regulator with very low dropout voltage (typically 20mV at light loads), very low ground current (225µA at 20mA output current), and better than 3 initial accuracy. This dual device comes in the miniature SOT-23-6 package, featuri

文件：70.52 Kbytes 页数：12 Pages

Micrel

麦瑞半导体

Dual 關Cap 80mA LDO Regulator

文件：1.1345 Mbytes 页数：9 Pages

Micrel

麦瑞半导体