MJD210

ComplementaryPlasticPowerTransistors

ComplementaryPlasticPowerTransistors NPN/PNPSiliconDPAKForSurfaceMountApplications Designedforlowvoltage,low−power,high−gainaudioamplifierapplications. Features •Collector−EmitterSustainingVoltage−VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain−hFE

MJD210

SILICONPOWERTRANSISTORS5AMPERES25VOLTS12.5WATTS

SILICONPOWERTRANSISTORS5AMPERES25VOLTS12.5WATTS MJD200NPN MJD210PNP NPN/PNPSiliconDPAKForSurfaceMountApplications ...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage—VCEO(sus)=25Vdc(Min)@IC=10mAdc

MJD210

D-PAKforSurfaceMountApplications

D-PAKforSurfaceMountApplications •HighDCCurrentGain •LowCollectorEmitterSaturationVoltage •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix)

MJD210

ComplementaryPlasticPowerTransistors

MJD210

PNPSILICONDPAKFORSURFACEMOUNTAPPLICATIONS

■DESCRIPTION TheUTCMJD210isdesignedforlowvoltage,low-power,high-gainaudioamplifierapplications. ■FEATURE *Collector-EmitterSustainingVoltage VCEO(SUS)=-25V(Min)@IC=-10mA *HighDCCurrentGain hFE=70(Min)@IC=-500mA =45(Min)@IC=-2A =10(Min)@

MJD210

ComplementaryPlasticPowerTransistors

MJD210

PNPSILICONDPAKFORSURFACEMOUNTAPPLICATIONS

MJD210

iscSiliconPNPPowerTransistor

DESCRIPTION •HighDCCurrentGain- :hFE=70(Min)@IC=-0.5A •LowCollectorSaturationVoltage- :VCE(sat)=-0.3V(Max.)@IC=-0.5A •ComplementtotheNPNMJD200 •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designedforlow

MJD210

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-25V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=-0.3V(Max)@IC=-0.5A APPLICATIONS ·Designedforuseingeneralpurposeampliferandlow Speedswitchingapplications

MJD210G

ComplementaryPlasticPowerTransistors