Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors

SCRs 10 AMPERES RMS 400 thru 800 VOLTS Designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. •Center Gate Geometry for Uniform Current Density •All Dif

文件：50.51 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

Blocking voltage to 800 V

Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circu

文件：281.49 Kbytes 页数：4 Pages

HAOPIN

好品微电子

Silicon Controlled Rectifiers

文件：396.04 Kbytes 页数：3 Pages

KERSEMI

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors

SCRs 10 AMPERES RMS 400 thru 800 VOLTS Designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. •Center Gate Geometry for Uniform Current Density •All Dif

文件：50.51 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

Silicon Controlled Rectifiers

文件：396.04 Kbytes 页数：3 Pages

KERSEMI

SENSITIVE & STANDARD(10A SCRs)

文件：586.97 Kbytes 页数：3 Pages

THINKISEMI

思祁半导体

可控硅 / 单向可控硅

First

福斯特