NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES • The NESG3033M14 is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz • Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz • SiGe HBT technology (UHS3) adopted: fmax = 110 GHz • This product

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RENESAS

瑞萨

0603

ROHM/罗姆

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ON

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TO-92

ONSEMI/安森美

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Nuvoton

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