NCE3008N

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE3008Nusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication. GeneralFeature ●VDS=30V,ID=8A RDS(ON)

NCE3008XM

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE3008XMusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication.GeneralFeatures ●VDS=30V,ID=8A RDS(ON)

NCE3008Y

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE3008Yusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication. GeneralFeature ●VDS=30V,ID=8A RDS(ON)

NX3008CBKS

30/30V,350/200mAN/P-channelTrenchMOSFET

NX3008CBKV

30/30V400/220mAN/P-channelTrenchMOSFET

NX3008CBKV

30/30V,400/220mAN/P-channelTrenchMOSFET

1.Generaldescription ComplementaryN/P-channelenhancementmodeField-EffectTransistor(FET)inanultrasmall andflatleadSOT666Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 2.Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •Trench

NX3008NBK

30V,400mAN-channelTrenchMOSFET

NX3008NBKMB

30V,singleN-channelTrenchMOSFET

NX3008NBKMB

30V,singleN-channelTrenchMOSFET

NX3008NBKMB

30V,singleN-channelTrenchMOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN1006B-3 (SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Veryfastswitching •Lowthresholdvoltage •TrenchMOSFETt