Dual N-Channel Power MOSFET

Features • ON-Resistance Nch : RDS(on)1=120mΩ (typ) • 1.8V Drive • ESD Diode - Protected Gate • Pb-Free, Halogen Free and RoHS Compliance

文件：432.35 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • ON-resistance Nch : RDS(on)1=120mΩ(typ.) • 1.8V drive • Halogen free compliance • Protection diode in

文件：386.2 Kbytes 页数：4 Pages

SANYO

三洋

双 N 沟道，功率 MOSFET，20V，2A，160mΩ

MCH6662 is a Power MOSFET, 20V, 160mΩ, 2A, Dual N-Channel for General-Purpose Switching Device Applications. • ON-Resistance Nch : RDS(on)1 = 120 mΩ (typ.)\n• Improves Efficiency by Reducing Conduction Losses. Reduces Heat Dissipation\n• 1.8V drive\n• Drive at Low Voltage\n• Pb-Free, Halogen Free and RoHS Compliance\n• Environmental Consideration\n• ESD Diode - Protected Gate\n• ESD Resistance;

ONSEMI

安森美半导体

Dual N-Channel Power MOSFET

Features • ON-Resistance Nch : RDS(on)1=120mΩ (typ) • 1.8V Drive • ESD Diode - Protected Gate • Pb-Free, Halogen Free and RoHS Compliance

文件：432.35 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Dual N-Channel Power MOSFET

Features • ON-Resistance Nch : RDS(on)1=120mΩ (typ) • 1.8V Drive • ESD Diode - Protected Gate • Pb-Free, Halogen Free and RoHS Compliance

文件：432.35 Kbytes 页数：6 Pages

ONSEMI

安森美半导体