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型号	下载订购	功能描述	制造商上传企业	LOGO
MCH6344	文件：547.63 Kbytes Page：5 Pages	Single P-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 4V driv 文件：547.63 Kbytes 页数：5 Pages	ONSEMI 安森美半导体	ONSEMI
MCH6344	文件：348.23 Kbytes Page：4 Pages	General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=115mΩ(typ.) • 4V drive • Halogen free compliance • Protection diode in 文件：348.23 Kbytes 页数：4 Pages	SANYO 三洋	SANYO
MCH6344	文件：482.05 Kbytes Page：7 Pages	General-Purpose Switching Device Applications 文件：482.05 Kbytes 页数：7 Pages	SANYO 三洋	SANYO
MCH6344	文件：300 bytes Page：1 Pages	Single P-Channel Power MOSFET, -30V, -2A, 150mΩ This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. • Low On-Resistance\n• Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation\n• Pb-Free, Halogen Free and RoHS compliance\n• Environmental Consideration\n• Ultra small Package MCPH3(2.0mm×2.1mm×0.85mmt)\n• Saves Board Space\n• 4V drive;	ONSEMI 安森美半导体	ONSEMI
MCH6344-TL-H	文件：547.63 Kbytes Page：5 Pages	Single P-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 4V driv 文件：547.63 Kbytes 页数：5 Pages	ONSEMI 安森美半导体	ONSEMI
MCH6344-TL-W	文件：547.63 Kbytes Page：5 Pages	Single P-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 4V driv 文件：547.63 Kbytes 页数：5 Pages	ONSEMI 安森美半导体	ONSEMI
MCH6344_12	文件：482.05 Kbytes Page：7 Pages	General-Purpose Switching Device Applications 文件：482.05 Kbytes 页数：7 Pages	SANYO 三洋	SANYO

技术参数

Pb-free：
Pb
Halide free：
H
Status：
Active
Channel Polarity：
P-Channel
Configuration：
Single
V(BR)DSS Min (V)：
-30
VGS Max (V)：
20
VGS(th) Max (V)：
2.6
ID Max (A)：
-2
PD Max (W)：
0.8
RDS(on) Max @ VGS = 4.5 V(mΩ)：
255
RDS(on) Max @ VGS = 10 V(mΩ)：
150
Qg Typ @ VGS = 4.5 V (nC)：
12
Qg Typ @ VGS = 10 V (nC)：
3.9
Ciss Typ (pF)：
172
Package Type：
SC-88FL/MCPH-6

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	MCH6344	ON/安森美	20+	SOT-363	120000	原装正品可含税交易	询价
深圳市威尔健半导体有限公司	MCH6344	ON/安森美	23+	SOT-363	50000	全新原装正品现货,支持订货	询价
深圳市鹏顺微电子科技有限公司	MCH6344	ON	2022+	SC-88FL / MCPH-6	38550	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市盈慧通电子有限公司	MCH6344	ON(安森美)	2511		8484	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
深圳市创新迹电子有限公司	MCH6344	ON/安森美	22+	SOT-363	20000	只做原装	询价
深圳市博中泰实业有限公司	MCH6344	ONSEMI/安森美	25+	SOT-363	90000	全新原装现货	询价
深圳市联世界科技有限公司	MCH6344-TL-H	ON	24+/25+		1960	原装正品现货库存价优	询价
深圳市海天鸿电子科技有限公司	MCH6344-TL-H	ON	1725+	?	7500	只做原装进口,假一罚十	询价
深圳市纳立科技有限公司	MCH6344-TL-W		三年内		1983	只做原装正品	询价
深圳诚思涵科技有限公司	MCH6344-TL-H	SANYO	19+	MCPH-6	200000		询价

更多MCH6344供应商更新时间2026-4-15 14:00:00

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