RF Transistor 8V, 150mA, fT=16GHz NPN Dual MCPH6

RF Transistor 8V, 150mA, fT=16GHz NPN Dual MCPH6 Features • Low-noise use : NF=1.2dB typ (f=1GHz) • High cut-off frequency : fT=16GHz typ (VCE=5V) • High gain : |S21e|2=16dB typ (f=1GHz) • Composite type with 2 RF transistor MCH4020 in one package facilitating high-density mounting

文件：492.82 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifi er

NPN Epitaxial Planar Silicon Composite Transistor Features • Low-noise use : NF=1.2dB typ (f=1GHz). • High cut-off frequency : fT=16GHz typ (VCE=5V). • High gain : |S21e|2=16dB typ (f=1GHz). • Composite type with 2 RF transistor MCH4020 in one package facilitating high-density mounting.

文件：256.86 Kbytes 页数：4 Pages

SANYO

三洋

射频晶体管，NPN 双沟道，8 V，150 mA，fT = 16 GHz

MCH6001 is RF Transistor, 8 V, 150 mA, fT = 16 GHz NPN Dual MCPH6 for High Frequency Low-Noise Amplifier. • Low-noise use : NF=1.2dB typ (f=1GHz)\n• High cut-off frequency : fT=16GHz typ (VCE=5V)\n• High gain : Forward Transfer Gain=16dB typ (f=1GHz)\n• Composite type with 2 RF transistor MCH4020 in one package facilitating high-density mounting;

ONSEMI

安森美半导体

RF Transistor 8V, 150mA, fT=16GHz NPN Dual MCPH6

RF Transistor 8V, 150mA, fT=16GHz NPN Dual MCPH6 Features • Low-noise use : NF=1.2dB typ (f=1GHz) • High cut-off frequency : fT=16GHz typ (VCE=5V) • High gain : |S21e|2=16dB typ (f=1GHz) • Composite type with 2 RF transistor MCH4020 in one package facilitating high-density mounting

文件：492.82 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：6-SMD，扁平引线；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列 描述：TRANS 2NPN 8V 0.15A 6MCPH

ONSEMI

安森美半导体