MCH5839

Single P-Channel Power MOSFET with Schottky Diode -20V, -1.5A, 266mΩ; • Pb-Free, Halogen Free and RoHS Compliance\n• Environmental consideration\n• MOSFET : ESD Diode - Protected Gate\n• ESD resistance\n• MOSFET : 1.8V Drive\n• Drive at low voltage\n• MOSFET : Low On-resistance RDS(on)1 = 205mΩ (typ)\n• Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation\n• Ultrasmall package MCPH5(2.0mm x 2.1mm x 0.85mmt)\n• Small and slim applied set\n• Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting\n• SBD : Short reverse recovery time\n• SBD : Low forward voltage\n;

MCH5839 is a P-Channel Power MOSFET, with Schottky Diode for general-purpose switching device applications.

MCH5839

Single P-Channel Power MOSFET

MCH5839-TL-H

Single P-Channel Power MOSFET

MCH5839-TL-W

Single P-Channel Power MOSFET

MSM5839

40-DOTSEGMENTDRIVER

GENERALDESCRIPTION TheMSM5839CisadotmatrixLCDsegmentdriverLSIwhichisfabricatedusinglowpowerCMOSmetalgatetechnology.ThisLSIconsistsoftwo20-bitshiftregisters,two20-bitlatches,a40-bitlevelshifteranda40-bit4-leveldriver. FEATURES •Supplyvoltage:4

MSM5839

40-DOTSEGMENTDRIVER

GENERALDESCRIPTION TheMSM5839BisadotmatrixLCDsegmentdriverLSIwhichisfabricatedusinglowpowerCMOSmetalgatetechnology.ThisLSIconsistsoftwo20-bitshiftregisters,two20-bitlatches,a40-bitlevelshifteranda40-bit4-leveldriver. FEATURES •Supplyvoltage:4

MSM5839B

40-DOTSEGMENTDRIVER

GENERALDESCRIPTION TheMSM5839BisadotmatrixLCDsegmentdriverLSIwhichisfabricatedusinglowpowerCMOSmetalgatetechnology.ThisLSIconsistsoftwo20-bitshiftregisters,two20-bitlatches,a40-bitlevelshifteranda40-bit4-leveldriver. FEATURES •Supplyvoltage:4

MSM5839B

DOTMATRIXLCD40DOTSEGMENTDRIVER

MSM5839C

40-DOTSEGMENTDRIVER

GENERALDESCRIPTION TheMSM5839CisadotmatrixLCDsegmentdriverLSIwhichisfabricatedusinglowpowerCMOSmetalgatetechnology.ThisLSIconsistsoftwo20-bitshiftregisters,two20-bitlatches,a40-bitlevelshifteranda40-bit4-leveldriver. FEATURES •Supplyvoltage:4

PJQ5839E-AU

30VDualP-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@-10V,ID@-10A