RF Transistor

Features • Low-noise use : NF=1.2dB typ (f=1GHz) • High cut-off frequency : fT=10GHz typ (VCE=5V) • High gain : |S21e|2=18dB typ (f=1GHz) • Halogen free compliance

文件：291.12 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

High-Frequency Low-Noise Amplifier

NPN Epitaxial Planar Silicon Transistor Features • Low-noise use : NF=1.2dB typ (f=1GHz) • High cut-off frequency : fT=10GHz typ (VCE=5V) • High gain : |S21e|2=18dB typ (f=1GHz) • Halogen free compliance

文件：84.31 Kbytes 页数：10 Pages

SANYO

三洋

射频晶体管，NPN 单，12 V，30 mA，fT = 10 GHz

MCHH4016 is RF Transistor, 12 V, 30 mA, fT = 10 GHz, NPN Single MCPH4. • Low Noicse use (NF=1.2gB typ (f=1GHz))\n• High cut-off frequency (fT=10GHz typ (VCE=5V))\n• High gain (Forward Transfer Gain=18dB typ (f=1GHz))\n• Halogen free compliance;

ONSEMI

安森美半导体

Package：SOT-343F；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 12V 10GHZ 4MCPH

ONSEMI

安森美半导体