P-Channel Power MOSFET ??2V, ??.5A, 69m廓, Single MCPH3

文件：391.83 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Low Voltage Drive Switching Device Applications

文件：376.59 Kbytes 页数：4 Pages

SANYO

三洋

Low Voltage Drive Switching Device Applications

文件：499.77 Kbytes 页数：7 Pages

SANYO

三洋

单 P 沟道，功率 MOSFET，-12V，-3.5A，69mΩ

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. • ESD Diode-Protected Gate\n• ESD Resistance\n• 0.9V drive\n• Drive at Low Voltage\n• Ultra Small Package MCPH3 (2.0mm x 2.1mm x 0.85mmt)\n• Board Space Saving\n• Low On-Resistance\n• Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation\n• Pb-Free, Halogen Free and RoHS compli;

ONSEMI

安森美半导体

Low Voltage Drive Switching Device Applications

文件：499.77 Kbytes 页数：7 Pages

SANYO

三洋

P-Channel Power MOSFET ??2V, ??.5A, 69m廓, Single MCPH3

文件：391.83 Kbytes 页数：7 Pages

ONSEMI

安森美半导体