Bipolar Transistor (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single MCPH3

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) • High allowable power dissipation Applicaitons • DC / DC co

文件：409.47 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

High-Current Switching Applications

High-Current Switching Applications Features • Adoption of FBET, MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultraminiature package facilitates miniaturization in end products (mounting height : 0.85mm). • High allowab

文件：36.75 Kbytes 页数：5 Pages

SANYO

三洋

Bipolar Transistor, (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single MCPH3

MCH3105/MCH3205 is Bipolar Transistor, (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single MCPH3 for High-Current Switching Applications. • Adoption of FBET, MBIT processes\n• Large current capacity\n• Low collector-to-emitter saturation voltage\n• High-speed switching\n• Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm)\n• High allowable power dissipation;

ONSEMI

安森美半导体

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single MCPH3

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) • High allowable power dissipation Applicaitons • DC / DC co

文件：409.47 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Package：SC-70，SOT-323；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 50V 3A MCPH3

ONSEMI

安森美半导体