Quad 2-Input NAND Gate

The MC74VHCT00A is an advanced high speed CMOS 2--input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immu

文件：207.76 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Quad 2-Input NAND Gate

The MC74VHCT00A is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise i

文件：260.829 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Quad 2-Input NAND Gate

The MC74VHCT00A is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The VHCT inputs are compatible with TTL levels. This device can b

文件：134.09 Kbytes 页数：5 Pages

Motorola

摩托罗拉

Quad 2-Input NAND Gate

文件：95.45 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Quad 2-Input NAND Gate

The MC74VHCT00A is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise i

文件：260.829 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Quad 2-Input NAND Gate

The MC74VHCT00A is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The VHCT inputs are compatible with TTL levels. This device can b

文件：134.09 Kbytes 页数：5 Pages

Motorola

摩托罗拉

Quad 2-Input NAND Gate

The MC74VHCT00A is an advanced high speed CMOS 2--input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immu

文件：207.76 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Quad 2-Input NAND Gate

The MC74VHCT00A is an advanced high speed CMOS 2--input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immu

文件：207.76 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Quad 2-Input NAND Gate

The MC74VHCT00A is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise i

文件：260.829 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Quad 2-Input NAND Gate

The MC74VHCT00A is an advanced high speed CMOS 2--input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immu

文件：207.76 Kbytes 页数：7 Pages

ONSEMI

安森美半导体