Single 2-Input NAND Gate

The MC74HC1G00 is a high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. • High Speed: tPD = 7 ns (Typ) at VCC = 5 V • Low Power Dissip

文件：62.47 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Single 2-Input NAND Gate

The MC74HC1G00 is a high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74HC1G00 output drive current is 1/2 compared to MC74H

文件：291.37 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Single 2-Input NAND Gate

文件：118.7 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Single 2-Input NAND Gate

文件：172.07 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Single 2-Input NAND Gate

The MC74HC1G00 is a high speed CMOS 2-input NAND gate fabricated with silicon gate CMOS technology.The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. • High Speed: tPD = 7ns (Typ) at VCC = 5V\n• Low Power Dissipation: ICC = 1mA (Max) at TA = 25°C\n• High Noise Immunity\n• Balanced Propagation Delays (tpLH = tpHL)\n• Symmetrical Output Impedance (IOH = IOL = 2mA)\n• Chip Complexity: FETs = 40;

ONSEMI

安森美半导体

Single 2-Input NAND Gate

The MC74HC1G00 is a high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74HC1G00 output drive current is 1/2 compared to MC74H

文件：291.37 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Single 2-Input NAND Gate

The MC74HC1G00 is a high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74HC1G00 output drive current is 1/2 compared to MC74H

文件：291.37 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Single 2-Input NAND Gate

The MC74HC1G00 is a high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. • High Speed: tPD = 7 ns (Typ) at VCC = 5 V • Low Power Dissip

文件：62.47 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Single 2-Input NAND Gate

The MC74HC1G00 is a high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. • High Speed: tPD = 7 ns (Typ) at VCC = 5 V • Low Power Dissip

文件：62.47 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Single 2-Input NAND Gate

The MC74HC1G00 is a high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74HC1G00 output drive current is 1/2 compared to MC74H

文件：291.37 Kbytes 页数：10 Pages

ONSEMI

安森美半导体