Quad 2?묲nput NAND Gate

Features • Output Drive Capability: 24 mA • Operating Voltage Range: 2 to 6 V AC00; 4.5 to 5.5 ACT00 • Low Input Current: 1.0㎂ • High Noise Immunity Characteristic of CMOS Devices • In Compliance With the JEDEC Standard No. 7A Requirements • Chip Complexity: 32 FETs • Pb−Free Packages are A

文件：148.94 Kbytes 页数：10 Pages

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安森美半导体

QUAD 2-INPUT NAND GATE

QUAD 2-INPUT NAND GATE • Outputs Source/Sink 24 mA • ′ACT00 Has TTL Compatible Inputs

文件：126.67 Kbytes 页数：5 Pages

MOTOROLA

摩托罗拉

Quad 2-Input NAND Gate

文件：90.37 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Quad 2-Input NAND Gate

• Output Drive Capability: +/-24 mA\n• Operating Voltage Range: 2 to 6 V AC00; 4.5 to 5.5 ACT00\n• Low Input Current: 1 µA\n• High Noise Immunity Characteristic of CMOS Devices\n• In Compliance With the JEDEC Standard No. 7A requirements\n• Pb-Free Packages are Available.;

ONSEMI

安森美半导体

QUAD 2-INPUT NAND GATE

QUAD 2-INPUT NAND GATE • Outputs Source/Sink 24 mA • ′ACT00 Has TTL Compatible Inputs

文件：126.67 Kbytes 页数：5 Pages

MOTOROLA

摩托罗拉

Quad 2?묲nput NAND Gate

Features • Output Drive Capability: 24 mA • Operating Voltage Range: 2 to 6 V AC00; 4.5 to 5.5 ACT00 • Low Input Current: 1.0㎂ • High Noise Immunity Characteristic of CMOS Devices • In Compliance With the JEDEC Standard No. 7A Requirements • Chip Complexity: 32 FETs • Pb−Free Packages are A

文件：148.94 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Quad 2?묲nput NAND Gate

Features • Output Drive Capability: 24 mA • Operating Voltage Range: 2 to 6 V AC00; 4.5 to 5.5 ACT00 • Low Input Current: 1.0㎂ • High Noise Immunity Characteristic of CMOS Devices • In Compliance With the JEDEC Standard No. 7A Requirements • Chip Complexity: 32 FETs • Pb−Free Packages are A

文件：148.94 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Quad 2?묲nput NAND Gate

Features • Output Drive Capability: 24 mA • Operating Voltage Range: 2 to 6 V AC00; 4.5 to 5.5 ACT00 • Low Input Current: 1.0㎂ • High Noise Immunity Characteristic of CMOS Devices • In Compliance With the JEDEC Standard No. 7A Requirements • Chip Complexity: 32 FETs • Pb−Free Packages are A

文件：148.94 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Quad 2?묲nput NAND Gate

Features • Output Drive Capability: 24 mA • Operating Voltage Range: 2 to 6 V AC00; 4.5 to 5.5 ACT00 • Low Input Current: 1.0㎂ • High Noise Immunity Characteristic of CMOS Devices • In Compliance With the JEDEC Standard No. 7A Requirements • Chip Complexity: 32 FETs • Pb−Free Packages are A

文件：148.94 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Quad 2?묲nput NAND Gate

Features • Output Drive Capability: 24 mA • Operating Voltage Range: 2 to 6 V AC00; 4.5 to 5.5 ACT00 • Low Input Current: 1.0㎂ • High Noise Immunity Characteristic of CMOS Devices • In Compliance With the JEDEC Standard No. 7A Requirements • Chip Complexity: 32 FETs • Pb−Free Packages are A

文件：148.94 Kbytes 页数：10 Pages

ONSEMI

安森美半导体