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MC141

传声器供电调理器

BSWATECH

北京声望

BSWATECH

MC14106B

Hex Schmitt Trigger

The MC14106B hex Schmitt Trigger is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14106B may be used in place of the MC14069UB hex inver

文件:182.28 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MC14106BCP

Hex Schmitt Trigger

The MC14106B hex Schmitt Trigger is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14106B may be used in place of the MC14069UB hex inver

文件:182.28 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MC14106BD

Hex Schmitt Trigger

The MC14106B hex Schmitt Trigger is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14106B may be used in place of the MC14069UB hex inver

文件:182.28 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MC14106BDR2

Hex Schmitt Trigger

The MC14106B hex Schmitt Trigger is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14106B may be used in place of the MC14069UB hex inver

文件:182.28 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MC14106BDT

Hex Schmitt Trigger

The MC14106B hex Schmitt Trigger is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14106B may be used in place of the MC14069UB hex inver

文件:182.28 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MC14106BDTR2

Hex Schmitt Trigger

The MC14106B hex Schmitt Trigger is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14106B may be used in place of the MC14069UB hex inver

文件:182.28 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MC1413

High Voltage, High Current Darlington Transistor Arrays

The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loa

文件:75.66 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MC1413

CMOS LSI (LOW-POWER COMPLEMENTARY MOS) 3 1/2 DIGIT A/D CONVERTER

CMOS LSI(LOW-POWER COMPLEMENTARY MOS) 3 1/2 DIGIT A/D CONVERTER

文件:450.58 Kbytes 页数:12 Pages

MOTOROLA

摩托罗拉

MC1413B

High Voltage, High Current Darlington Transistor Arrays

The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loa

文件:75.66 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

技术参数

  • 重量:

    160 g)

  • 频率响应:

    5 to 200k Hz)

  • 使用湿度范围:

    0to95% RH)

  • 产品分类:

    传声器供电器

  • 滤波器:

  • 使用温度范围:

    - 10to50C)

  • 尺寸:

    113×70×45 mm)

  • 输入通道数:

    1

  • 输出通道接口:

    BNC

  • 极化电压:

    0V

  • 使用电源:

    1×9V 电池供电 或 220V 适配器

  • 输入通道接口:

    BNC

  • 输出通道数:

    1

  • 前置供电:

    4 mA

供应商型号品牌批号封装库存备注价格
23+
12000
全新原装的现货
询价
MOT
25+
DIP24
600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ON.SEMI
00/01+
TSSOP-14
124
全新原装100真实现货供应
询价
ON
13+
SOP16
3043
原装分销
询价
MOT
98+
DIP14
3300
全新原装进口自己库存优势
询价
MOT
17+
NA
6200
100%原装正品现货
询价
ON
24+
NA
4652
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
MOT
24+/25+
25
原装正品现货库存价优
询价
ON
SOP-16
2500
原装长期供货!
询价
MOT
24+
DIP
72
询价
更多MC141供应商 更新时间2026-2-26 9:16:00